Core-Shell p-i-n GaN Nanowire LEDs by N-polar Selective Area Growth

本站引用的位置2 处，涉及 4 个知识点

1. NIST publication §Abstract and device characterization，p/n contacts, array current path and electroluminescence

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2. NIST publication §Abstract，selective-area growth, radial p-i-n junction, contacts and electroluminescence

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