Studies of the Distribution of Elementary Threading Screw Dislocations In 4H Silicon Carbide Wafer
National Institute of Standards and Technology
本站引用的位置1 处，涉及 2 个知识点
Publication §Abstract，PVT-grown 3-inch 4H-SiC and X-ray topography
National Institute of Standards and Technology
Publication §Abstract，PVT-grown 3-inch 4H-SiC and X-ray topography